Gate-Oxide Breakage Assisted by HCI in Advanced STI DeMOS Transistors


This letter provides, for the first time, experimental proof supporting that hot-carrier injection not only degrades electrical performance in drain-extended MOS transistors with shallow trench isolation (STI DeMOS) however conjointly induces a severe gate-oxide (Gox) degradation and wear-out of the oxide. During the Gox degradation at high-stress conditions, a steep increase of interface traps $(N_rm it)$ and oxide traps $(N_rm ot)$ is detected in the buildup region by using charge pumping. A subsequent fast degradation of the device electrical characteristics is observed.

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