PROJECT TITLE :
Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications
This letter proposes straightforward pointers to style nanoscale fin-based mostly multigate field-result transistors (FinFETs) for radio frequency (RF)/analog applications in terms of fin height and fin spacing. Geometry-dependent capacitive and resistive parasitics are evaluated using analytic models and are included in a small-signal circuit. It's found that reducing the fin-spacing-to-fin-height ratio of FinFETs, as long as it is compatible with the method integration, is desirable for improving RF performance. This is because the present-gain cutoff frequency and the utmost oscillation frequency are plagued by decreasing parasitic capacitance additional than by increasing series resistance.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here