PROJECT TITLE :

Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications

ABSTRACT :

This letter proposes straightforward pointers to style nanoscale fin-based mostly multigate field-result transistors (FinFETs) for radio frequency (RF)/analog applications in terms of fin height and fin spacing. Geometry-dependent capacitive and resistive parasitics are evaluated using analytic models and are included in a small-signal circuit. It's found that reducing the fin-spacing-to-fin-height ratio of FinFETs, as long as it is compatible with the method integration, is desirable for improving RF performance. This is because the present-gain cutoff frequency and the utmost oscillation frequency are plagued by decreasing parasitic capacitance additional than by increasing series resistance.


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