PROJECT TITLE :
Effects of a High-k Dielectric on the Performance of III–V Ballistic Deflection Transistors
This letter presents a initial successful integration of a high-k dielectric, i.e., $hboxAl_2hboxO_3$, with III–V semiconductors in ballistic deflection transistors (BDTs). The $hboxAl_2hboxO_3$ is deposited using atomic layer deposition, which allows the formation of uniform layers along the walls of etched trenches. The BDT transfer characteristic shows robust dependence on the dielectric permittivity of the fabric filling the etched trenches. When $hboxAl_2hboxO_3$ is deposited in the trenches, the transconductance of the BDT is enhanced and shifted to lower gate bias. Moreover, the ratio between output and leakage currents was conjointly enhanced.
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