200-V Lateral Superjunction LIGBT on Partial SOI


This letter presents a completely unique lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in zero.eighteen-$muhboxm$ partial-SOI (PSOI) high-voltage (HV) method. For an n-kind superjunction LIGBT, the p-layer within the superjunction drift region not solely helps in achieving uniform electrical field distribution however conjointly contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an $R_rm dson$ of 765 $hboxmOmegacdothboxmm^2$. It exhibits [*fr1] the value of specific on-state resistance $R_rm dson$ and 3 times higher saturation current $(I_rm dsat)$ for the same BV, compared to a comparable lateral superjunction laterally diffused metal–oxide–semiconductor fabricated in the identical technology. It conjointly performs well in higher temperature dc operation with 38.8% increase in $R_rm dson$ at one hundred seventy five $^circhboxC$, compared to the room temperature while not any degradation in latch-up performance. To appreciate this device, it only requires one extra mask layer into X-FAB zero.18-$muhboxm$ PSOI HV method.

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