PROJECT TITLE :
Modeling the Electrothermal Stability of Power MOSFETs During Switching Transients
This letter investigates the electrothermal stability of MOSFETs throughout switching transients. Switch-mode MOSFETs, when transiting between the opposite ends of the load line, experience bias conditions with high thermal runaway chance, i.e., $R_rm TH cdot V_rm DS cdot dI_rm DS/dT > hbox1$. It's shown here that the likelihood of thermal runaway will increase when $dI_rm DS/dT$ is positive and therefore the switching duration is larger than the thermal time constant. This condition is worse for advanced MOSFETs with high transconductance because the zero-temperature-crossover purpose happens at higher drain currents. This letter uses a physically calibrated MOSFET model for detailed analysis of the electrothermal dynamics during switching transients.
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