Design and Scalability of a Memory Array Utilizing Anchor-Free Nanoelectromechanical Nonvolatile Memory Device


This letter explains a nanoelectromechanical (NEM) nonvolatile memory (NVM) architecture using an anchor-free electrode (shuttle) structure. The proposed NEM device utilizes adhesion forces to attain bistable mechanical states for nonvolatile data storage. The anchor-free electrode facilitates higher scalability compared to traditional anchored NEM devices, that is fascinating for circuit applications. The structure is electrostatically actuated and has low operating voltage. A unique memory cell consisting of the proposed NEM memory device and two MOS transistors (1NEM-2T) is proposed for array implementation. The scalability analysis of the proposed NEM NVM array is also presented.

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