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Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited

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PROJECT TITLE :

Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited

ABSTRACT :

This letter compares TiN/La/TiN (TLT) and TiLaN (TLN) metal gates on $ hboxHfO_2/hboxSi$ substrates, focusing on the flatband voltage $(V_rm FB)$ modulation and interfacial layer (IL) scaling. The maximum $V_rm FB$ modulation worth of the $hboxTLT/HfO_2/hboxSi$ stack was $-$423 mV compared to the $V_ rm FB$ of the TiN single-metal case, that is superior to that of TLN ( $-$247 mV). This is often as a result of the TiN barrier layer within the TLT metal stack prevents interfacial oxidation. Both TLT and TLN gate metals effectively shrink the IL thickness to values below zero.5 nm. Within the case where the TLT metal gate was annealed at 60zero $^ circhboxC$ for thirty s, the IL thickness was virtually zero, and the equivalent oxide thickness was decreased to zero.8 nm although the maximum temperature was restricted to 60zero $^ circhboxC$.


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Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited - 4.8 out of 5 based on 83 votes

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