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Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

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PROJECT TITLE :

Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

ABSTRACT :

The reliability of AlGaN/GaN HEMTs processed on bulk GaN substrates was studied using electrical and optical methods, showing a decreasing degradation with increasing base-plate temperature $(T_b)$. Generation of traps spatially located in each intrinsic and extrinsic HEMT regions was found to be most pronounced for off-state bias stress performed at room $T_b$, while increasing $T_b$ up to 150 $^circhboxC$ decreased trap generation underneath the gate perimeter. This was attributed to degradation driven by hot electrons because it ought to dominate over defect-connected degradation mechanisms in GaN-on-GaN devices.


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Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates - 4.8 out of 5 based on 49 votes

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