Correlation Between Random Telegraph Noise and Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain


The random telegraph noise (RTN) characteristics of twenty eight-nm pMOSFETs with tip-shaped SiGe supply/drain have been investigated. RTN analysis found that strained devices endure higher compressive strain; the entice position from the $hboxSi/SiO_2$ interface is reduced, as a result of of the nearer entice energy level near the valence band. Though tip-formed SiGe method induces higher oxide lure density, the lure position equivalent to the tunneling attenuation length $(lambda)$ might result in lower $hbox1/f$ noise level in tip-shaped SiGe S/D devices as compared with that of management devices.

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