Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel


The operation characteristics of p-channel $hboxTaN/breakhboxAl_2hboxO_3/hboxHfO_2/hboxHfAlO_2/hboxSiO_2/hboxSi$ MAHOS-type nonvolatile memory devices with different Ge contents in an exceedingly SiGe buried channel are investigated in this letter. Compared with those of a device having a typical Si-channel, each programming and erasing speeds are considerably improved by employing a $hboxSi_0.7hboxGe_0.3$ buried channel. Satisfactory retention and excellent endurance characteristics up to $hbox10^6 hboxP/E cycles$ with memory window show that the degradation on reliability properties, if it exists, is negligible when the SiGe buried channel is introduced.

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