PROJECT TITLE :
Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires
The impact of discrete random dopant fluctuations on ten-nm-long high-performance Schottky-barrier (SB) dopant-segregated (DS) nanowire MOSFETs is investigated through nonequilibrium Green's perform quantum simulations. Using DS, nanoscale SB-FETs may outperform standard doped supply and drain FETs in terms of $I_rm ON/I_rm OFF$. By reintroducing dopants in SB, but, variability issues are unavoidable and will be strong, at least for thin-width SB-FETs, as a result of of the dopant influence on the SB profile on that the tunneling current is kind of sensitive.
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