PROJECT TITLE :
Conduction Mechanism of Se Schottky Contact to n-Type Ge
The conduction mechanism of Se/n-type-Ge Schottky diodes is investigated using temperature-dependent current–voltage ($I$–$V$) characteristics. The presence of microscopic inhomogeneity at the Se/Ge interface could be the primary reason behind the differences between the barrier heights measured from the $I$–$V$ and capacitance–voltage ($C$–$V$ ) characteristics. The position of the quasi-Fermi level advised the dominance of thermionic emission in the forward bias region. The electrical field dependence of the reverse current revealed that Schottky emission, together with the generation mechanism, has dominance over this conduction within the reverse bias region.
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