Chemical Oxide Interfacial Layer for the High- -Last/Gate-Last Integration Scheme


The authors propose a high-$k$-last with gate-last integration theme with a chemical oxide interfacial layer (IL). It was found that chemical oxide IL may kind Hf-silicate at the high-$k/hboxIL$ interface thus as to supply us a larger effective $k$ worth and a smaller equivalent oxide thickness (EOT). It had been additionally found that the larger leakage current density for the samples with chemical oxide IL could be effectively suppressed by postdeposition annealing (PDA). Furthermore, it absolutely was found that PDA-induced larger EOT might be reduced by optimizing the metal gate stack.

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