Design Optimization of Pulsed-Mode Electromechanical Nonvolatile Memory


Storage-layer-based mostly nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at extreme temperature (HT, $T > hbox200 ^circ hboxC$). On the contrary, storage-layer-free NVM devices based mostly on a bistable nanoelectromechanical (NEM) mechanism and adhesion forces show wonderful reliability at HT. This letter presents design optimization of an electrostatic NEM NVM device. The set/ reset principle is based on the pulsed-mode switching of a mechanically free electrode (the shuttle), that is placed within a guiding pod, having 2 stable positions. Primarily based on the shuttle kinematic equation, this letter derives key design and operation parameters, particularly optimization in terms of switching speed and switching energy. The tiny footprint of the shuttle NEM NVM makes it applicable to ultracompact and reliable information storage at HT.

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