Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Phosphorus-Doped Source/Drain Regions


Self-aligned prime-gate amorphous indium–gallium–zinc oxide (a-IGZO) skinny-film transistors (TFTs) with phosphorus-doped source/drain regions are developed in this letter. The resulting a-IGZO TFT exhibits high thermal stability and smart electrical performance, together with field-result mobility of 5 $hboxcm^2/hboxVcdot hboxs$, a threshold voltage of 5.6 V, a subthreshold swing of zero.five V/dec, and an on/off current ratio of $ hbox6times hbox10^7$. With reducing of the channel length, smart characteristics are obtained with a small shift in the brink voltage and no degradation in the subthreshold swing.

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