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A Drain-Extended MOS Device With Spreading Filament Under ESD Stress

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PROJECT TITLE :

A Drain-Extended MOS Device With Spreading Filament Under ESD Stress

ABSTRACT :

Primarily based on 3-D TCAD simulations, a 10-times improvement within the ESD performance of drain-extended NMOS device is predicted by incorporating deep p-implant underneath the n$^+$ drain region. The proposed modification will not degrade the intrinsic MOS characteristics, therefore enabling a self-protection ESD concept. Moreover, an in depth physical insight toward the achieved improvement is given.


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A Drain-Extended MOS Device With Spreading Filament Under ESD Stress - 4.8 out of 5 based on 49 votes

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