A Drain-Extended MOS Device With Spreading Filament Under ESD Stress


Primarily based on 3-D TCAD simulations, a 10-times improvement within the ESD performance of drain-extended NMOS device is predicted by incorporating deep p-implant underneath the n$^+$ drain region. The proposed modification will not degrade the intrinsic MOS characteristics, therefore enabling a self-protection ESD concept. Moreover, an in depth physical insight toward the achieved improvement is given.

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