PROJECT TITLE :

Reduced Trap-State Density of Ni-Silicide Seed-Induced Crystallized Poly-Si TFTs by Gettering

ABSTRACT :

Polycrystalline silicon thin-film transistors (TFTs) fabricated by seed-induced crystallization (SIC) have giant leakage currents because of defects that encompass Ni impurities. Here, we have a tendency to describe a unique technique of gettering to get rid of Ni impurities using a Si gettering layer that's separated from the active layer by a chemical $hboxSiO_2$ etch stop interlayer fashioned by dipping into $hboxH_2hboxSO_4$. The leakage current, the on/off ratio, and a channel breakdown voltage were greatly improved. These results were explained by lowered lure-state density in the channel.


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