PROJECT TITLE :
Reduced Trap-State Density of Ni-Silicide Seed-Induced Crystallized Poly-Si TFTs by Gettering
Polycrystalline silicon thin-film transistors (TFTs) fabricated by seed-induced crystallization (SIC) have giant leakage currents because of defects that encompass Ni impurities. Here, we have a tendency to describe a unique technique of gettering to get rid of Ni impurities using a Si gettering layer that's separated from the active layer by a chemical $hboxSiO_2$ etch stop interlayer fashioned by dipping into $hboxH_2hboxSO_4$. The leakage current, the on/off ratio, and a channel breakdown voltage were greatly improved. These results were explained by lowered lure-state density in the channel.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here