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Characteristics of Plasma-Fluorinated Zinc Oxide Thin-Film Transistors

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PROJECT TITLE :

Characteristics of Plasma-Fluorinated Zinc Oxide Thin-Film Transistors

ABSTRACT :

Plasma-immersion doping, a technique additional compatible with the processing of enormous-area glass substrates, is investigated as a substitute of ion implantation for incorporating fluorine during a zinc oxide skinny film to improve the electrical characteristics of the corresponding skinny-film transistors. Since the average energy of the ions in a plasma is lower than that of the ions used for implantation, less harm is induced within the channel of a transistor by the bombardment of the ions. Consequently, enhancement-mode transistors with a comparatively high field-result mobility of $simhbox71 hboxcm^2/hboxVcdothboxs$, a lower drain leakage current, and improved reliability are realized.


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Characteristics of Plasma-Fluorinated Zinc Oxide Thin-Film Transistors - 4.9 out of 5 based on 15 votes

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