High-Responsivity Modulation-Doped AlGaAs/InGaAs Thermopiles for Uncooled IR-FPA Utilizing Integrated HEMT–MEMS Technology


Novel thermopiles based on modulation-doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time for uncooled IR focal plane array (FPA) image sensor application. The high responsivity $R$ with the high-speed response time $tau$are designed to be 4900 V/W with a hundred and ten $muhboxs$. Based mostly on integrated high-electron-mobility-transistor–microelectromechanical-system technology, the 32 $times$ thirty two matrix FPAs are fabricated to demonstrate its enhanced performance by blackbody measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled IR FPA applications.

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