New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory


New schemes of read operation using boosted channel potential of adjacent bit-line (BL) strings are proposed for improving on-state current of a cell string in nand Flash memory. The channel resistance of pass cells in an exceedingly cell string under browse operation is decreased by the electric field due to the boosted channel potential of adjacent BL strings, which will increase on-state current of the cell string. Proposed schemes give much smaller scan disturbance compared with standard ones as a result of the boosted channel potential of unselected BL strings prevents soft programming in cells of the unselected BL strings. It was additionally shown that new scan operation of #a pair of theme ends up in suppress the background pattern dependence by $sim$58p.c, as compared with the standard scan operation scheme.

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