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840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate

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PROJECT TITLE :

840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate

ABSTRACT :

Multifinger lateral-kind AlGaN/GaN Schottky barrier diode (SBD) with bonding pad over active (BPOA) structure was fabricated and exhibited wonderful device performances, like forward current of 6 A at one.5 V, leakage current of sixteen $muhboxA$ at $-$ 600 V, reverse-recovery time $(T_rm rr)$ of eighteen ns, breakdown voltage of 840 V, and low specific on-resistance $(R_rm on)$ of 9 $hboxmOmega cdot hboxcm^2$, ensuing in the figure-of-advantage $(V_rm BR^2/R_rm on)$ as high as 78 $hboxMW/cm^2$, that demonstrates that the AlGaN/GaN SBD with BPOA structure features a great potential application to the high-power electronics.


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840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate - 4.7 out of 5 based on 68 votes

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