PROJECT TITLE :
Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline- -Based Resistive-Switching Memory Devices
Low-frequency noise (LFN) characteristics are studied in polycrystalline-$hboxTiO_x$-primarily based resistive random access reminiscences (RRAMs). LFNs are proportional to $hbox1/f$ in high-resistance state (HRS), however those in low-resistance state (LRS) are proportional to $hbox1/f$ solely in but $sim$a hundred Hz. The normalized noise power in HRS is around three orders of magnitude over that in LRS. Bias dependence of $ hbox1/f$ noise shows that the current conduction mechanisms from noise measurements are per those from this–voltage relationships in $ hboxTiO_x$-primarily based unipolar RRAM devices.
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