PROJECT TITLE :
Polarity Dependence of the Conduction Mechanism in Interlevel Low- Dielectrics
Leakage currents of interlevel carbon-doped silicon oxide low-$k$ dielectric in copper interconnect structure are investigated at completely different temperatures. Exceptional bias polarity dependences of conduction current and breakdown voltage are observed. Totally different conduction mechanisms are found in several electric field ranges. The conduction phenomena were explained by the asymmetry energy band diagram and surface defects. The bias polarity dependence of breakdown voltage indicates that the breakdown mechanism of interlevel low-$k$ dielectric is attributed to carrier current but not electric field as ascribed by $E$-model.
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