Size-Dependent-Transport Study of Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion


InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm are experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties are systematically investigated. It's found that reducing nanowire dimension ends up in higher on-current, transconductance, and effective mobility because of stronger quantum confinement and the volume-inversion impact. TCAD quantum mechanical simulation has been distributed to review the inversion charge distribution within the nanowires. Volume-inversion effect seems at a bigger dimension for InGaAs nanowire MOSFET than its Si counterpart.

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