PROJECT TITLE :
Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With of 275 GHz
In this letter, we demonstrate state-of-the-art performance from N-polar GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors. Self-aligned gate-first process was used for the fabrication of transistors. Graded InGaN and InN contact layers were used to attain low ohmic contact resistance. The GaN channel thickness was scaled to 7 nm from previous generation of N-polar GaN devices to boost the facet ratio and hence achieve higher tiny-signal performance. The devices reported $f_T$ of 210 GHz for $L_G = hbox30 hboxnm$. To additional improve the device performance, SiN sidewall spacers were etched and replaced with air gaps resulting in further boost in $f_T$ to a state-of-the-art value of 275 GHz.
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