PROJECT TITLE :
Formation and Characterization of Filamentary Current Paths in -Based Resistive Switching Structures
In this letter, the progressive nature of the forming process step in $ hboxHfO_2$-based resistive switching structures is investigated. Contrary to what happens with ramped or pulsed voltage stresses, current-driven degradation experiments shed light on the formation dynamics of the filamentary path across the oxide layer. The ensuing voltage–current characteristics are interpreted in terms of electron transport through a mesoscopic constriction with adiabatic form. The voltage decrease throughout the forming method is ascribed to a relaxation of the electron wavefunction confinement effect. The role of the compliance level on the leakage current magnitude is additionally mentioned at intervals this framework.
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