Reliability Improvement of 28-nm High- /Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing


In this letter, performance and reliability of high-$k$ /metal gate MOSFETs can be effectively improved using postmetallization annealing. Both oxygen and nitrogen were shown to diffuse into a high-$k$/$hboxSiO_2$ interfacial layer to suppress the formation of oxygen vacancy, thus reducing the gate leakage current while not increasing effective oxide thickness. In explicit, with appropriate oxygen annealing, gate-induced drain leakage, drain-current degradation, and gate leakage current variation of high- $k$/metal gate-last MOSFETs can be efficiently suppressed.

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