First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz


In this letter, high-output-power-density GaN-primarily based high-electron-mobility transistors grown on a 100-mm silicon substrate is demonstrated for the primary time at 40 GHz. The use of an optimized double heterostructure primarily based on ultrathin barrier AlN/GaN permits each high current density and low leakage current, ensuing in high-frequency performance ($f_max$ close to two hundred GHz). Furthermore, the management of the trapping effects on these highly scaled devices enabled to line a first benchmark at 40 GHz with two.five W/mm at $V_DS = hbox15 hboxV$, mainly limited by RF losses and thermal issues. These results show that an AlN/GaN/AlGaN heterostructure grown on silicon substrate may be a viable technology for price-effective high-power millimeter-wave amplifiers absolutely compatible with standard Si-based devices.

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