Low-Frequency Noise in Enhancement-Mode GaN MOS-HEMTs by Using Stacked Gate Dielectric


In this letter, enhancement-mode AlGaN/GaN metal–oxide semiconductor high-electron-mobility transistors (HEMT) (MOS-HEMTs) are realized by using $hboxN_2hboxO$ plasma oxidation and $hboxGd_2hboxO_3$ stacked-gate dielectric technologies. Before the gate metal was deposited, the AlGaN barrier layer was treated by one hundred fifty-W $hboxN_2hboxO$ plasma for 200 s to remove the AlGaN native oxide layer and, simultaneously, to create $hboxAl_2hboxO_3/ hboxGa_2hboxO_3$ compound insulator. Then, a ten-nm-thick high-dielectric-constant $hboxGd_2hboxO_3$ skinny film was electron-beam evaporated as a stacked-gate dielectric. To elucidate the interface phenomena of the device, the dependence of the $hbox1/f$ noise spectra on the gate bias was studied. The fluctuation that is caused by trapping/detrapping of free channel carriers near the gate interface will be reduced by $hboxN_2hboxO$ plasma treatment. Additionally, the variation of the Hooge issue $(alpha_H)$ of a traditional metal gate GaN HEMT, measured at 77 K and 300 K, is big, significantly within the subthreshold gate voltage regime. The tunneling leakage current that is induced by the interface traps is decided to be beyond that within the MOS-HEMT design. The brink voltage $(V_rm th)$ of depletion-mode GaN HEMT was $-- 3.fifteen V, and this worth can be shifted to $+$zero.6 using $ hboxN_2hboxO$-treated stacked-gate AlGaN/GaN MOS-HEMTs.

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