Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

1 1 1 1 1 Rating 4.71 (68 Votes)

PROJECT TITLE :

An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell

ABSTRACT :

In this letter, an 8-Mb phase-change random access memory (PCRAM) chip has been developed during a one hundred thirty-nm 4-ML standard CMOS technology primarily based on a Resistor-on-Via-stacked-Plug (RVP) storage cell structure. This part-change resistor is made after CMOS logic fabrication. PCRAM will be embedded without changing any logic device and method. The memory cell selector is implemented by a customary one.a pair of-V nMOS device. The currents of the set and reset operations are 0.four and a pair of.a pair of mA, respectively. The most effective endurance is over $hbox10^10$ cycles.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell - 4.7 out of 5 based on 68 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...