An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell


In this letter, an 8-Mb phase-change random access memory (PCRAM) chip has been developed during a one hundred thirty-nm 4-ML standard CMOS technology primarily based on a Resistor-on-Via-stacked-Plug (RVP) storage cell structure. This part-change resistor is made after CMOS logic fabrication. PCRAM will be embedded without changing any logic device and method. The memory cell selector is implemented by a customary one.a pair of-V nMOS device. The currents of the set and reset operations are 0.four and a pair of.a pair of mA, respectively. The most effective endurance is over $hbox10^10$ cycles.

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