AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current


In this letter, a hybrid Schottky–ohmic drain structure is proposed for AlGaN/GaN high-electron-mobility transistors on a Si substrate. While not additional photomasks and further process steps, the hybrid drain style forms a $Gamma$-formed electrode to sleek the electric field distribution at the drain aspect, that improves the breakdown voltage and lowers the leakage current. Still, the hybrid drain provides an auxiliary current path and decreases the on -resistance, in distinction to the devices with a pure Schottky drain. Compared with the standard ohmic drain devices, the breakdown voltage may be improved up to 64.9%, and also the leakage current is suppressed by one order of magnitude without degradation of the specific on-resistance.

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