PROJECT TITLE :
Understanding Overreset Transition in Phase-Change Memory Characteristics
In an exceedingly part-change memory (PCM), the overreset phenomenon, specifically, the resistance decrease at pulse amplitudes well beyond the reset current, may have an effect on the resistance window and also the device noise margin. We have a tendency to characterized overreset states in PCM devices by electrical testing and electron microscopy. Our analysis shows that overreset programmed cell presents changes in the electronic band structure of the amorphous phase, with no degradation in the programmed amorphous volume.
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