Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Understanding Overreset Transition in Phase-Change Memory Characteristics

1 1 1 1 1 Rating 4.80 (83 Votes)

PROJECT TITLE :

Understanding Overreset Transition in Phase-Change Memory Characteristics

ABSTRACT :

In an exceedingly part-change memory (PCM), the overreset phenomenon, specifically, the resistance decrease at pulse amplitudes well beyond the reset current, may have an effect on the resistance window and also the device noise margin. We have a tendency to characterized overreset states in PCM devices by electrical testing and electron microscopy. Our analysis shows that overreset programmed cell presents changes in the electronic band structure of the amorphous phase, with no degradation in the programmed amorphous volume.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Understanding Overreset Transition in Phase-Change Memory Characteristics - 4.8 out of 5 based on 83 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...