Understanding Overreset Transition in Phase-Change Memory Characteristics


In an exceedingly part-change memory (PCM), the overreset phenomenon, specifically, the resistance decrease at pulse amplitudes well beyond the reset current, may have an effect on the resistance window and also the device noise margin. We have a tendency to characterized overreset states in PCM devices by electrical testing and electron microscopy. Our analysis shows that overreset programmed cell presents changes in the electronic band structure of the amorphous phase, with no degradation in the programmed amorphous volume.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Understanding Practical Tradeoffs in HPC Checkpoint-Scheduling Policies - 2018ABSTRACT:As the dimensions of High-Performance Computing (HPC) clusters continues to grow, their increasing failure rates and energy
PROJECT TITLE : Mining Online Discussion Data for Understanding Teachers' Reflective Thinking - 2017 ABSTRACT: Teachers’ online discussion text knowledge streamline their reflective thinking. With the growing scale of
PROJECT TITLE : Understanding the Relation Between the Performance and Reliability of NAND Flash/SCM Hybrid Solid-State Drive - 2016 ABSTRACT: A NAND flash memory/storage-class memory (SCM) hybrid solid-state drive (SSD) will
PROJECT TITLE :Sharing the Ride of Power: Understanding Transactive Energy in the Ecosystem of Energy EconomicsABSTRACT:Advocates of Transactive Energy (TE) create arguments for the mixing of distributed energy resources (DERs)
PROJECT TITLE :Understanding the Magnetic Polarizability TensorABSTRACT:The aim of this paper is to provide new insights into the properties of the rank two polarizability tensor proposed by Ledger and Lionheart for describing

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry