Hole Transport in Strained $hbox_ hbox_$ QW-MOSFETs With $langlehboxrangle$ and $langlehboxrangle$ Channel Orientations


Hole velocity and mobility are extracted from quantum-well (QW) biaxially strained $hboxSi_0.5hboxGe_0.5$ channel metal–oxide–semiconductor field-effect transistors (MOSFETs) on silicon-on-insulator wafers. Devices are fabricated at sub-100-nm gate length with $hboxHfO_2/hboxTiN$ gate stacks. A significant hole mobility enhancement over the strained Si mobility curve is observed for QW MOSFETs. We additionally discuss the link between velocity and mobility of the strained SiGe channels with high Ge content for $langlehbox100rangle$ and $langlehbox110rangle$ crystal directions. Whereas the mobility increases by eighteen% for $langlehbox100rangle$ with respect to $langlehbox110rangle$, it translates into a modest 8percent velocity increase.

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