PROJECT TITLE :
Correlated Flicker Noise and Hole Mobility Characteristics of Uniaxially Strained SiGe FINFETs
Hole mobility and flicker noise characteristics of uniaxially strained $( hbox110)/langlehbox110rangle$ $hboxSi_0.75 hboxGe_0.25$ pFINFETs $(hboxSSGOI_0.25)$ are investigated in this letter. Equivalent gate referred flicker noise in $ hboxSSGOI_0.25$ is dominated by correlated number and mobility fluctuation within the low-bias regime and Hooge mobility fluctuation in the high-bias regime. The extracted Hooge parameter in $hboxSSGOI_0.25$ and in Si pFINFETs is $hbox10^-5$ and $ hbox10^-4$, respectively. The lower value of the Hooge parameter in $hboxSSGOI_0.25$ pFINFETs is attributed to improved phonon-restricted mobility compared to the SOI pFINFETs. $hboxSSGOI_0.25 hboxFINFETs$ are found to exhibit the lowest equivalent gate referred flicker noise among any nonplanar devices reported up to now.
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