PROJECT TITLE :
Effects of Metal Capping on Thermal Annealing of Copper Interconnects
Grain growth of Cu interconnects in an exceedingly low-$k$ dielectric was achieved at an elevated anneal temperature of three hundred $^circhboxC$ without stress-migration-related reliability problems. For this, a TaN metal passivation layer was deposited on the plated Cu overburden surface previous to the thermal annealing process. As compared to the traditional anneal method at one hundred $^circhboxC$, the passivation layer enabled further Cu grain growth at the elevated temperature, which then resulted in an increased Cu grain size and improved electromigration resistance within the resulted Cu interconnects.
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