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InAlN/GaN HEMTs for Operation in the 1000 Regime: A First Experiment

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PROJECT TITLE :

InAlN/GaN HEMTs for Operation in the 1000 Regime: A First Experiment

ABSTRACT :

GaN-based mostly heterostructures, and here, significantly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact schemes, HEMT devices have been fabricated allowing high-temperature 1-MHz large-signal operation at a thousand $^circhboxC$ (in vacuum) for twenty five h. Despite slow gate contact degradation, major degradation of the heterostructure could not be observed. Extrapolation of the RF characteristics suggests that operation up to gigahertz frequencies at this temperature could be possible.


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InAlN/GaN HEMTs for Operation in the 1000 Regime: A First Experiment - 4.7 out of 5 based on 94 votes

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