PROJECT TITLE :

InAlN/GaN HEMTs for Operation in the 1000 Regime: A First Experiment

ABSTRACT :

GaN-based mostly heterostructures, and here, significantly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact schemes, HEMT devices have been fabricated allowing high-temperature 1-MHz large-signal operation at a thousand $^circhboxC$ (in vacuum) for twenty five h. Despite slow gate contact degradation, major degradation of the heterostructure could not be observed. Extrapolation of the RF characteristics suggests that operation up to gigahertz frequencies at this temperature could be possible.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


PROJECT TITLE :High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate DielectricABSTRACT:We have a tendency to have demonstrated high-performance InAlN/ GaN MOS high-electron-mobility-transistors (MOSHEMTs)
PROJECT TITLE :Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTsABSTRACT:Typical leakage current degradation behaviors are observed in lattice-matched In0.17Al0.83N/GaN Schottky
PROJECT TITLE :0.1- Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power AmplifiersABSTRACT:High-performance 0.1-μm InAlN/GaN high electron-mobility transistors (HEMTs) are successfully
PROJECT TITLE :Metal-Semiconductor–Metal Varactors Based on InAlN/GaN Heterostructure With Cutoff Frequency of 308 GHzABSTRACT:Metal-semiconductor–metal (MSM) varactor diodes based mostly on InAlN/GaN high electron mobility
PROJECT TITLE :Distributed Web Systems Performance Forecasting Using Turning Bands Method - 2013ABSTRACT:With the increasing development of distributed computer systems (DCSs) in networked industrial and manufacturing applications

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry