PROJECT TITLE :

Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs

ABSTRACT :

GaAs high-electron-mobility transistors (HEMTs) have been widely used for radio-frequency (RF) applications because of the wonderful material properties. One in every of the essential parts of the HEMTs is the gate Schottky barrier layer. InGaP has been proposed and proven as a higher Schottky barrier material for the RF performance of the GaAs HEMTs. This letter investigates the influence of the GaAs HEMTs with two totally different Schottky layers, that are InGaP and AlGaAs on device transient characteristics under electrostatic discharge (ESD) stress. Though InGaP presents important advantages on improving RF performance of GaAs HEMTs, it shows inferiority in ESD robustness.


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