Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer


During this study, the characteristics of the nitride-based near-UV light-weight-emitting diode (LED) with an InAlN/GaN superlattice (SL) electron-blocking layer (EBL) are analyzed numerically and experimentally. The emission spectra, carrier concentrations in the quantum wells, energy-band diagrams, electrostatic fields, and internal quantum potency are investigated. The results indicate that the LED with an InAlN/GaN SL EBL encompasses a higher hole-injection efficiency and lower electron leakage over the LED with a conventional rectangular AlGaN EBL or with an AlGaN/GaN SL EBL. The results conjointly show that the efficiency droop is markedly improved when the InAlN/GaN SL EBL is employed.

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