Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm


During this letter, we report the performance of high-$kappa$ /metal gate nanowire (NW) transistors while not junctions fabricated with a channel thickness of nine nm and sub-fifteen-nm gate length and NW width. Near-ideal subthreshold slope (SS) and very low leakage currents are demonstrated for ultrascaled gate lengths with a high on–off ratio $(I_rm on/I_rm off) > hbox10^6$. For the primary time, an SS less than 70 mV/dec is achieved at $L_G = hbox13 hboxnm$ for n-type and p-kind transistors, highlighting excellent electrostatic integrity of trigate junctionless NW MOSFETs.

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