Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs


During this letter, we present a thermal network extraction methodology to characterize self-heating result using 2-port RF measurements. We show the technique of determining isothermal condition using solely the self-heating (thermal) dominated range of the spectrum. We use a self-consistent self-heating extraction theme using each the real and imaginary parts of drain port admittance parameters. Appropriate thermal network is investigated, and a massive quantity of temperature rise because of self-heating is confirmed for short channel silicon-on-insulator MOSFETs with ultrathin body and buried oxide.

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