Low-Power-Driven and Low-Optical-Loss 40-Gb/s Electroabsorption Modulator Using Self-Aligned Two-Step Undercut-Etched Waveguide


During this letter, a high-efficiency low-power-driven 40-Gb/s electroabsorption modulator is demonstrated using a new type of waveguide, i.e., self-aligned two-step undercut-etched waveguide (SATSUEW). The low-optical-and-electrical-loss performance can be realized from the smooth facet wall, wide ridge, and little core of SATSUEW, enabling high-potency high-speed optical modulation. Through a 350-$ muhboxm$-long waveguide, 35-dB extinction ratio and 25-dB/V dc modulation potency are observed, while optical insertion loss is kept at $-$half-dozen.5 dB (transmission loss of one dB/a hundred $muhboxm$). A forty-Gb/s operation using one-Vpp ac driving power with thirteen-dB extinction ratio is attained, additional verified by 55-GHz electrical-to-optical response. The simulated 40-Gb/s eye diagram using distributive effect exhibits a uniform result with the experiment, suggesting that long SATSUEW can be applied to high-bit-rate and high-potency operation and so relaxing the wants of fabric and structure in high-speed optoelectronics.

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