MOSFET Drain Current Noise Modeling With Effective Gate Overdrive and Junction Noise


During this letter, a drain current noise model that features the channel thermal noise and therefore the shot noise generated at the source–bulk junction and therefore the drain–bulk junction is presented. A unified analytical expression comes to confirm excellent continuity with sleek transition of drain current noise from weak- to robust-inversion regimes, including the moderate-inversion region. Glorious agreement between simulated and extracted noise knowledge has shown that the proposed model is correct over completely different dimensions and operating conditions.

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