-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior


During this letter, $hboxHfO_2$-based RRAM with varying device sizes is mentioned with an analysis of the device-size dependence on reset current $(I_rm reset)$. Device sizes right down to sixty nm were achieved by using completely different thicknesses of nitride spacer once 200-nm contact hole is made. Platinum (Pt) bottom electrode and titanium nitride (TiN) prime electrode were used with $hboxHfO_2$ dielectric because the resistance switching layer. Uniform bipolar switching characteristics with a very low $I_rm reset$ of concerning one hundred $ muhboxA$ are achieved in 60-nm contact size devices. Self-compliance effect is additionally observed within the scaled devices.

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