Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory


Conductive-bridge random access memory (CBRAM) devices have shown low-power programming, quick switching, and sensible device scalability. In specific, the massive resistance window and good control of the conductive filament (CF) size may permit for economical multilevel-cell (MLC) operation. Toward this aim, the structural stability of the CF must be demonstrated. This letter addresses the soundness of the set states in CBRAM. We have a tendency to evidence a size-dependent drift of the CF resistance, that is interpreted by surface relaxation due to defect rearrangement. An analytical model is developed, describing the size-dependent drift in terms of partial and full depletion of the CF by the surface defect.

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