CMOS-Integrated Poly-SiGe Piezoresistive Pressure Sensor


An integrated poly-SiGe-primarily based piezoresistive pressure sensor, which is directly fabricated above zero.thirteen $muhboxm$ Cu-back-finish CMOS technology, is presented. This represents not only the primary integrated poly-SiGe pressure sensor directly fabricated on top of its readout circuit however additionally the first time that a poly-SiGe MEMS device is processed on high of Cu-back-end CMOS. Despite the low processing temperature $(leqhbox455 ^circhboxC)$ to allow for on top of-CMOS integration, the poly-SiGe piezoresistive sensor alone ($hbox250 times hbox250 muhboxm^2$ membrane) showed a sensitivity of around a pair of.five mV/V/bar. The identical sensor exhibited a sensitivity of 159.5 mV/V/bar after on-chip amplification. The CMOS circuit showed no significant deterioration after the MEMS processing, though a resistance increase for the Cu-crammed metal-to-metal and the tungsten-stuffed CMOS–MEMS vias was observed.

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