PROJECT TITLE :

In-Plane Gate Transistors With a 40- -Wide Channel Width

ABSTRACT :

An in-plane gate transistor with a GaAs/AlGaAs 2-D electron-gas channel concerning 40 $muhboxm$ in width is investigated. The saturation region and also the drain current modulation at different gate bias voltages are observed despite the wide channel. The surface-induced channel depletion is instructed as the main mechanism for the turn-off of the drain current at $-$10 V gate bias.


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