High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs


An excellent on/off current ratio of $hbox10^10$ and a virtually ideal subthreshold slope of 65 mV/dec was confirmed in a very p-InGaN/AlGaN/GaN high-electron-mobility transistor. Favorable $I$–$V$ characteristics were achieved with the p-InGaN cap layer below the gate electrode. A dry etching technique with a coffee-harm p-InGaN cap layer resulted during a significantly low leakage current of $hbox10^-11 hboxA/mm$.

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