Temperature Dependence of Electron Mobility on Strained nMOSFETs Fabricated by Strain-Gate Engineering


An effective electron mobility improvement that uses strain-proximity-free technique (SPFT) has been demonstrated using strain-gate engineering. The electron mobility of nMOSFETs with SPFT exhibits a 15percent increase over that of counterpart techniques. The preamorphous layer (PAL) gate structure on the SPFT showed a additional performance boost. The electron mobility exhibits a 52p.c improvement in nMOSFET employing a combination of SPFT and PAL gate structure. Furthermore, the gain in electron mobility within the SPFT together with PAL gate structure decreases at high temperatures. Gate dielectric interface states and ionized gate impurities inducing carrier scattering can play vital roles when operating devices beneath high-temperature conditions.

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