PROJECT TITLE :
Multibranch Mobility Analysis for the Characterization of FDSOI Transistors
A unique technique for the accurate carrier mobility analysis in ultrathin totally depleted SOI-MOSFETs is proposed. The mobility illustration, obtained from the mixture of Poisson–Schrödinger numerical simulations and split $C(V)$ experimental results, discloses the mobility dependence on the effective field by accounting for the actual electric field and carrier profiles within the body of the device. As example of this method, we show that the apparent larger mobility enhancement, thanks to back-gate bias, observed in skinny-BOX transistors with respect to thick-BOX devices, is connected to an electric field reduction rather than alternative technological factors.
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