Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications


A unique 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated primarily based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. As well, cosputtered Cu/Ti bonding exhibits sensible electrical performance plus high resistance to multiple current stressing. With the advantages of fabrication potency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in three-D integration.

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